Invention Grant
US09000342B2 Passive type image sensor and method including first and second anti-blooming transistors discharging electric charges while integrating electric charges
有权
无源型图像传感器和方法，其包括在积分电荷的同时对第一和第二防喷花晶体管进行放电
- Patent Title: Passive type image sensor and method including first and second anti-blooming transistors discharging electric charges while integrating electric charges
- Patent Title (中): 无源型图像传感器和方法，其包括在积分电荷的同时对第一和第二防喷花晶体管进行放电
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Application No.: US13102358Application Date: 2011-05-06
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Publication No.: US09000342B2Publication Date: 2015-04-07
- Inventor: Hack-Soo Oh
- Applicant: Hack-Soo Oh
- Applicant Address: KR Seoul
- Assignee: Dongbu HiTek Co., Ltd.
- Current Assignee: Dongbu HiTek Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: Sherr & Jiang, PLLC
- Priority: KR10-2010-0078962 20100816
- Main IPC: H01L27/00
- IPC: H01L27/00 ; H01J40/14 ; H01L27/146
Abstract:
A passive type image sensor and a method for operating the same. The passive type image sensor includes a photoelectric conversion section configured to receive light and integrate electric charges; a transfer section configured to transmit the integrated electric charges; an output section configured to received integrated electric charges from the transfer section and amplify and output the amplified electric charges; and an electric charge discharging section configured to discharge the electric charges flowing from the photoelectric conversion section to a common node through the transfer section while integrating the electric charge integration in the photoelectric conversion section.
Public/Granted literature
- US20120037788A1 PASSIVE TYPE IMAGE SENSOR AND METHOD OF OPERATING THE SAME Public/Granted day:2012-02-16
Information query
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