Invention Grant
- Patent Title: Memory device with low reset current
- Patent Title (中): 具有低复位电流的存储器件
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Application No.: US11871761Application Date: 2007-10-12
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Publication No.: US09000408B2Publication Date: 2015-04-07
- Inventor: Sergey Kostylev , Tyler Lowrey , Wolodymyr Czubatyj
- Applicant: Sergey Kostylev , Tyler Lowrey , Wolodymyr Czubatyj
- Applicant Address: US MI Sterling Heights
- Assignee: Ovonyx, Inc.
- Current Assignee: Ovonyx, Inc.
- Current Assignee Address: US MI Sterling Heights
- Agency: Honigman Miller Schwartz and Cohn LLP
- Main IPC: H01L45/00
- IPC: H01L45/00
Abstract:
An electronic device includes a first electrode and a second electrode. The device also includes a resistive material between the first and second electrodes. An active material is between the first electrode and the resistive material. The active material is in electrical communication with the first electrode and the active material is in electrical communication with the second electrode through the resistive layer.
Public/Granted literature
- US20090095951A1 Memory Device With Low Reset Current Public/Granted day:2009-04-16
Information query
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