Invention Grant
US09000418B2 Field effect transistor, method of manufacturing the same, and electronic device using the same
有权
场效应晶体管，其制造方法以及使用该场效应晶体管的电子器件
- Patent Title: Field effect transistor, method of manufacturing the same, and electronic device using the same
- Patent Title (中): 场效应晶体管，其制造方法以及使用该场效应晶体管的电子器件
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Application No.: US11719641Application Date: 2005-11-18
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Publication No.: US09000418B2Publication Date: 2015-04-07
- Inventor: Takayuki Takeuchi , Kenji Harada , Nobuaki Kambe , Jun Terao
- Applicant: Takayuki Takeuchi , Kenji Harada , Nobuaki Kambe , Jun Terao
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: Hamre, Schumann, Mueller & Larson, P.C.
- Priority: JP2004-335726 20041119
- International Application: PCT/JP2005/021270 WO 20051118
- International Announcement: WO2006/054709 WO 20060526
- Main IPC: H01L51/00
- IPC: H01L51/00 ; H01L51/40 ; H01L51/05
Abstract:
A field-effect transistor includes a semiconductor layer (14) having a portion functioning as a channel region. The semiconductor layer (14) includes, as its constituent components, a plurality of electrically conductive microparticles (52), organic semiconductor molecules (53) bonded to the microparticles (52) so as to link the microparticles to one another (52), and cyclic molecules. Each of the organic semiconductor molecules (53) includes a π-electron conjugated chain as its main chain, and the π-electron conjugated chain is insulated by cyclic molecules.
Public/Granted literature
- US20090152532A1 FIELD EFFECT TRANSISTOR, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC DEVICE USING THE SAME Public/Granted day:2009-06-18
Information query
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