Invention Grant
US09000432B2 Enhanced electron mobility at the interface between GD2O3(100)/N-SI(100)
有权
在GD2O3（100）/ N-SI（100）之间的界面处的增强的电子迁移率
- Patent Title: Enhanced electron mobility at the interface between GD2O3(100)/N-SI(100)
- Patent Title (中): 在GD2O3（100）/ N-SI（100）之间的界面处的增强的电子迁移率
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Application No.: US14314183Application Date: 2014-06-25
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Publication No.: US09000432B2Publication Date: 2015-04-07
- Inventor: Raphael Tsu , Wattaka Sitapura , John Hudak
- Applicant: Raphael Tsu , Wattaka Sitapura , John Hudak
- Applicant Address: US NC Charlotte
- Assignee: The University of North Carolina at Charlotte
- Current Assignee: The University of North Carolina at Charlotte
- Current Assignee Address: US NC Charlotte
- Agency: Oliff PLC
- Agent R. Brian Drozd
- Main IPC: H01L29/12
- IPC: H01L29/12 ; H01L29/47 ; H01L29/24 ; H01L21/02 ; H01L21/28 ; H01L29/51 ; C23C14/08 ; C23C14/24 ; C30B23/02 ; C30B29/16 ; H01L29/78
Abstract:
A multilayered structure is provided. The multilayered structure may include a silicon substrate and a film of gadolinium oxide disposed on the silicon substrate. The top surface of the silicon substrate may have silicon orientated in the 100 direction (Si(100)) and the gadolinium oxide disposed thereon may have an orientation in the 100 direction (Gd2O3(100)).
Public/Granted literature
- US20140306315A1 ENHANCED ELECTRON MOBILITY AT THE INTERFACE BETWEEN GD2O3(100)/N-SI(100) Public/Granted day:2014-10-16
Information query
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