Invention Grant
- Patent Title: Optoelectronic element and manufacturing method thereof
- Patent Title (中): 光电元件及其制造方法
-
Application No.: US13205987Application Date: 2011-08-09
-
Publication No.: US09000461B2Publication Date: 2015-04-07
- Inventor: Cheng-Nan Han , Tsung-Xian Lee , Min-Hsun Hsieh , Hung-Hsuan Chen , Hsin-Mao Liu , Hsing-Chao Chen , Ching-San Tao , Chih-Peng Ni , Tzer-Perng Chen , Jen-Chau Wu
- Applicant: Cheng-Nan Han , Tsung-Xian Lee , Min-Hsun Hsieh , Hung-Hsuan Chen , Hsin-Mao Liu , Hsing-Chao Chen , Ching-San Tao , Chih-Peng Ni , Tzer-Perng Chen , Jen-Chau Wu
- Applicant Address: TW Hsinchu
- Assignee: Epistar Corporation
- Current Assignee: Epistar Corporation
- Current Assignee Address: TW Hsinchu
- Agency: Ditthavong & Steiner, P.C.
- Priority: TW98124681A 20090721; TW98146171A 20091230
- Main IPC: H01L33/46
- IPC: H01L33/46 ; H01L33/00 ; H01L33/20 ; H01L33/38 ; H01L33/48 ; H01L33/58

Abstract:
An optoelectronic element includes an optoelectronic unit having a first top surface, a first bottom surface opposite to the first top surface, and a lateral surface between the first top surface and the first bottom surface; a first transparent structure covering the lateral surface and exposing the first top surface of the optoelectronic unit; a first insulating layer on the first top surface and the first transparent structure; a second insulating layer on the first insulating layer; a first opening through the first insulating layer and the second insulating layer; and a first conductive layer on the second insulating layer and electrically connecting to the optoelectronic unit via the first opening.
Public/Granted literature
- US20110291145A1 OPTOELECTRONIC ELEMENT AND MANUFACTURING METHOD THEREOF Public/Granted day:2011-12-01
Information query
IPC分类: