A semiconductor structure includes a temporary substrate; a first semiconductor layer positioned on the temporary substrate; a dielectric layer comprising a plurality of patterned nano-scaled protrusions disposed on the first semiconductor layer; a dielectric layer surrounding the plurality of patterned nano-scaled protrusions and disposed on the first semiconductor layer; and a second semiconductor layer positioned on the dielectric layer, wherein the top surfaces of the patterned nano-scaled protrusions are in contact with the bottom of the second semiconductor layer. An etching process is performed on the semiconductor structure to separate the first semiconductor layer and the second semiconductor layer, in order to detach the temporary substrate from the second semiconductor layer and transfer the second semiconductor layer to a permanent substrate.