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US09000468B2 Diode having vertical structure 有权
二极管具有垂直结构

Diode having vertical structure
Abstract:
A light emitting diode includes a conductive layer, an n-GaN layer on the conductive layer, an active layer on the n-GaN layer, a p-GaN layer on the active layer, and a p-electrode on the p-GaN layer. The conductive layer is an n-electrode.
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