Invention Grant
- Patent Title: Diode having vertical structure
- Patent Title (中): 二极管具有垂直结构
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Application No.: US13951344Application Date: 2013-07-25
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Publication No.: US09000468B2Publication Date: 2015-04-07
- Inventor: Myung Cheol Yoo
- Applicant: LG Electronics Inc.
- Applicant Address: KR Seoul
- Assignee: LG Innotek Co., Ltd.
- Current Assignee: LG Innotek Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: McKenna Long & Aldridge LLP
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01S5/30 ; H01L33/32 ; H01L33/40

Abstract:
A light emitting diode includes a conductive layer, an n-GaN layer on the conductive layer, an active layer on the n-GaN layer, a p-GaN layer on the active layer, and a p-electrode on the p-GaN layer. The conductive layer is an n-electrode.
Public/Granted literature
- US20130308671A1 DIODE HAVING VERTICAL STRUCTURE Public/Granted day:2013-11-21
Information query
IPC分类: