Invention Grant
US09000484B2 Non-uniform lateral profile of two-dimensional electron gas charge density in type III nitride HEMT devices using ion implantation through gray scale mask
有权
使用通过灰度掩模的离子注入的III型氮化物HEMT器件中的二维电子气体电荷密度的不均匀横向轮廓
- Patent Title: Non-uniform lateral profile of two-dimensional electron gas charge density in type III nitride HEMT devices using ion implantation through gray scale mask
- Patent Title (中): 使用通过灰度掩模的离子注入的III型氮化物HEMT器件中的二维电子气体电荷密度的不均匀横向轮廓
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Application No.: US13478402Application Date: 2012-05-23
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Publication No.: US09000484B2Publication Date: 2015-04-07
- Inventor: Sameh G. Khalil , Karim S. Boutros
- Applicant: Sameh G. Khalil , Karim S. Boutros
- Applicant Address: US CA Malibu
- Assignee: HRL Laboratories, LLC
- Current Assignee: HRL Laboratories, LLC
- Current Assignee Address: US CA Malibu
- Agency: Ladas & Parry
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L21/265 ; H01L29/34 ; H01L29/778 ; H01L29/20 ; H01L29/423
Abstract:
A high electron mobility field effect transistor (HEMT) includes a two dimensional electron gas (2DEG) in the drift region between the gate and the drain that has a non-uniform lateral 2DEG distribution that increases in a direction in the drift region from the gate to the drain.
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