Invention Grant
- Patent Title: III-nitride heterojunction device
- Patent Title (中): III族氮化物异质结装置
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Application No.: US13906294Application Date: 2013-05-30
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Publication No.: US09000486B2Publication Date: 2015-04-07
- Inventor: Paul Bridger , Robert Beach
- Applicant: International Rectifier Corporation
- Applicant Address: US CA El Segundo
- Assignee: International Rectifier Corporation
- Current Assignee: International Rectifier Corporation
- Current Assignee Address: US CA El Segundo
- Agency: Farjami & Farjami LLP
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/205 ; H01L29/06 ; H01L29/10 ; H01L29/778 ; H01L29/20
Abstract:
A III-nitride heterojunction semiconductor device having a III-nitride heterojunction that includes a discontinuous two-dimensional electron gas under a gate thereof.
Public/Granted literature
- US20130256695A1 III-Nitride Heterojunction Device Public/Granted day:2013-10-03
Information query
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