Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US13946602Application Date: 2013-07-19
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Publication No.: US09000488B2Publication Date: 2015-04-07
- Inventor: Akira Endoh
- Applicant: Fujitsu Limited
- Applicant Address: JP Kawasaki
- Assignee: Fujitsu Limited
- Current Assignee: Fujitsu Limited
- Current Assignee Address: JP Kawasaki
- Agency: Fujitsu Patent Center
- Priority: JP2012-196207 20120906
- Main IPC: H01L29/778
- IPC: H01L29/778 ; H01L29/66 ; H01L29/423 ; H01L29/205
Abstract:
A semiconductor device includes: an electron transit layer formed with a semiconductor material, the electron transit layer being formed on a semiconductor substrate; an n-type semiconductor layer formed with a semiconductor material having a wider bandgap than the electron transit layer, the n-type semiconductor layer being formed on the electron transit layer; a δ doping area having an n-type impurity doped in a sheet-shaped region, the δ doping area being formed on the n-type semiconductor layer; and a barrier layer formed with a semiconductor material having a wider bandgap than the electron transit layer, the barrier layer being formed on the δ doping area.
Public/Granted literature
- US20140061726A1 SEMICONDUCTOR DEVICE Public/Granted day:2014-03-06
Information query
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