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US09000495B2 Semiconductor apparatus having penetration electrode and method for manufacturing the same 有权
具有穿透电极的半导体装置及其制造方法

Semiconductor apparatus having penetration electrode and method for manufacturing the same
Abstract:
According to one embodiment, in a semiconductor apparatus, a semiconductor substrate has a first surface and a second surface opposite to the first surface. A semiconductor device is formed in a rectangular region enclosed by a plurality of dicing lines of the semiconductor substrate. The semiconductor device includes a first electrode provided on the first surface and a second electrode provided on the second surface so as to pass a current between the first electrode and the second electrode. A penetration electrode is formed in a region not enclosed by the dicing lines of the semiconductor substrate. One end of the penetration electrode extends on the first surface. The other end of the penetration electrode is electrically connected to the second electrode.
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