Invention Grant
- Patent Title: Semiconductor apparatus having penetration electrode and method for manufacturing the same
- Patent Title (中): 具有穿透电极的半导体装置及其制造方法
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Application No.: US13228293Application Date: 2011-09-08
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Publication No.: US09000495B2Publication Date: 2015-04-07
- Inventor: Daisuke Yamashita
- Applicant: Daisuke Yamashita
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Patterson & Sheridan, LLP
- Priority: JPP2011-009528 20110120
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L21/70 ; H01L29/40 ; H01L21/66 ; H01L23/00 ; H01L21/683

Abstract:
According to one embodiment, in a semiconductor apparatus, a semiconductor substrate has a first surface and a second surface opposite to the first surface. A semiconductor device is formed in a rectangular region enclosed by a plurality of dicing lines of the semiconductor substrate. The semiconductor device includes a first electrode provided on the first surface and a second electrode provided on the second surface so as to pass a current between the first electrode and the second electrode. A penetration electrode is formed in a region not enclosed by the dicing lines of the semiconductor substrate. One end of the penetration electrode extends on the first surface. The other end of the penetration electrode is electrically connected to the second electrode.
Public/Granted literature
- US20120187544A1 SEMICONDUCTOR APPARATUS HAVING PENETRATION ELECTRODE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2012-07-26
Information query
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