Invention Grant
US09000497B2 Trench MOSFET having an independent coupled element in a trench
有权
沟槽MOSFET在沟槽中具有独立的耦合元件
- Patent Title: Trench MOSFET having an independent coupled element in a trench
- Patent Title (中): 沟槽MOSFET在沟槽中具有独立的耦合元件
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Application No.: US13617744Application Date: 2012-09-14
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Publication No.: US09000497B2Publication Date: 2015-04-07
- Inventor: Tetsuo Sato , Tomoaki Uno , Hirokazu Kato , Nobuyoshi Matsuura
- Applicant: Tetsuo Sato , Tomoaki Uno , Hirokazu Kato , Nobuyoshi Matsuura
- Applicant Address: US CA Santa Clara
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Campbell Stephenson LLP
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L23/58 ; H01L21/70 ; H01L23/34 ; H03K17/16 ; H01L29/40 ; H01L29/78 ; H01L29/417 ; H02M1/44 ; H03K17/687
Abstract:
A trench MOSFET is disclosed that includes a semiconductor substrate having a vertically oriented trench containing a gate. The trench MOSFET further includes a source, a drain, and a conductive element. The conductive element, like the gate is contained in the trench, and extends between the gate and a bottom of the trench. The conductive element is electrically isolated from the source, the gate, and the drain. When employed in a device such as a DC-DC converter, the trench MOSFET may reduce power losses and electrical and electromagnetic noise.
Public/Granted literature
- US20140077778A1 TRENCH MOSFET HAVING AN INDEPENDENT COUPLED ELEMENT IN A TRENCH Public/Granted day:2014-03-20
Information query
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