Invention Grant
- Patent Title: FinFET with multiple concentration percentages
- Patent Title (中): FinFET具有多个浓度百分比
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Application No.: US13931581Application Date: 2013-06-28
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Publication No.: US09000498B2Publication Date: 2015-04-07
- Inventor: Pierre Morin
- Applicant: STMicroelectronics, Inc.
- Applicant Address: US TX Coppell
- Assignee: STMicroelectronics, Inc.
- Current Assignee: STMicroelectronics, Inc.
- Current Assignee Address: US TX Coppell
- Agency: Seed IP Law Group PLLC
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/02 ; H01L29/66
Abstract:
An apparatus of a semiconductor is provided wherein the apparatus comprises a substrate, a stack, and a fin. The substrate supports the stack and the substrate comprises a first material. The stack provides for the fin and the stack comprises: a strain induced in the stack via the substrate; the first material and a second material; and a plurality of concentrations of the second material with respect to the first material. The fin provides a source and a drain of a field effect transistor.
Public/Granted literature
- US20150001595A1 FINFET WITH MULTIPLE CONCENTRATION PERCENTAGES Public/Granted day:2015-01-01
Information query
IPC分类:
