Invention Grant
US09000499B2 Gate-all-around carbon nanotube transistor with selectively doped spacers
有权
具有选择性掺杂间隔物的全栅碳纳米管晶体管
- Patent Title: Gate-all-around carbon nanotube transistor with selectively doped spacers
- Patent Title (中): 具有选择性掺杂间隔物的全栅碳纳米管晶体管
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Application No.: US13971150Application Date: 2013-08-20
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Publication No.: US09000499B2Publication Date: 2015-04-07
- Inventor: Aaron D. Franklin , Siyuranga O. Koswatta , Joshua T. Smith
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Agent Vazken Alexanian
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L51/05 ; B82Y10/00 ; B82Y99/00 ; H01L51/00
Abstract:
A method of fabricating a semiconducting device is disclosed. A carbon nanotube is formed on a substrate. A portion of the substrate is removed to form a recess below a section of the carbon nanotube. A doped material is applied in the recess to fabricate the semiconducting device. The recess may be between one or more contacts formed on the substrate separated by a gap.
Public/Granted literature
- US20140151765A1 GATE-ALL-AROUND CARBON NANOTUBE TRANSISTOR WITH SELECTIVELY DOPED SPACERS Public/Granted day:2014-06-05
Information query
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