Invention Grant
- Patent Title: Image sensor with doped transfer gate
- Patent Title (中): 具有掺杂传输门的图像传感器
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Application No.: US12942517Application Date: 2010-11-09
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Publication No.: US09000500B2Publication Date: 2015-04-07
- Inventor: Hung Q. Doan , Eric G. Stevens
- Applicant: Hung Q. Doan , Eric G. Stevens
- Applicant Address: US CA Santa Clara
- Assignee: OmniVision Technologies, Inc.
- Current Assignee: OmniVision Technologies, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely Sokoloff Taylor & Zafman LLP
- Main IPC: H01L31/113
- IPC: H01L31/113 ; H01L27/146

Abstract:
An image sensor includes an array of pixels, with at least one pixel including a photodetector formed in a substrate layer and a transfer gate disposed adjacent to the photodetector. The substrate layer further includes multiple charge-to-voltage conversion regions. A single photodetector can transfer collected charge to a single charge-to-voltage conversion region, or alternatively multiple photodetectors can transfer collected charge to a common charge-to-voltage conversion region shared by the photodetectors. An implant region formed when dopants are implanted into the substrate layer to form source/drain implant regions is disposed in only a portion of each transfer gate while each charge-to-voltage conversion region is substantially devoid of the implant region.
Public/Granted literature
- US20110156112A1 IMAGE SENSOR WITH DOPED TRANSFER GATE Public/Granted day:2011-06-30
Information query
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