Invention Grant
US09000507B2 Method and system for recovering from transistor aging using heating
有权
使用加热从晶体管老化恢复的方法和系统
- Patent Title: Method and system for recovering from transistor aging using heating
- Patent Title (中): 使用加热从晶体管老化恢复的方法和系统
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Application No.: US13929013Application Date: 2013-06-27
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Publication No.: US09000507B2Publication Date: 2015-04-07
- Inventor: Bradley P. Smith , Mehul D. Shroff
- Applicant: Bradley P. Smith , Mehul D. Shroff
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor, Inc.
- Current Assignee: Freescale Semiconductor, Inc.
- Current Assignee Address: US TX Austin
- Agent Jonathan N. Geld
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/00 ; H01L29/43 ; G05F1/10
Abstract:
A mechanism is provided for extending useable lifetimes of semiconductor devices that are subject to trapped charge carriers in a gate dielectric. Embodiments of the present invention provide heat to the gate dielectric region from one or more sources, where the heat sources are included in a package along with the semiconductor device. It has been determined that heat, when applied during a period when the channel region of a transistor is in accumulation mode or is not providing a current across the channel, can at least partially recover the device from trapped charge carrier effects. Embodiments of the present invention supply heat to the affected gate dielectric region using mechanisms available where the semiconductor device is used (e.g., in the field).
Public/Granted literature
- US20150002211A1 METHOD AND SYSTEM FOR RECOVERING FROM TRANSISTOR AGING USING HEATING Public/Granted day:2015-01-01
Information query
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