Invention Grant
US09000510B2 Nonvolatile memory device with upper source plane and buried bit line
有权
具有上源平面和埋位线的非易失性存储器件
- Patent Title: Nonvolatile memory device with upper source plane and buried bit line
- Patent Title (中): 具有上源平面和埋位线的非易失性存储器件
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Application No.: US13608652Application Date: 2012-09-10
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Publication No.: US09000510B2Publication Date: 2015-04-07
- Inventor: Young-Ok Hong
- Applicant: Young-Ok Hong
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP&T Group LLP
- Priority: KR10-2011-0145057 20111228
- Main IPC: H01L29/792
- IPC: H01L29/792 ; H01L27/115
Abstract:
A nonvolatile memory device includes: a channel layer extending in a vertical direction from a substrate; a plurality of interlayer dielectric layers and word lines alternately stacked along the channel layer over the substrate; a bit line formed under plurality of interlayer dielectric layers and word lines, coupled to the channel layer, and extending in a direction crossing the word lines; and a common source layer coupled to the channel layer and formed over the plurality of interlayer dielectric layers and word lines.
Public/Granted literature
- US20130168757A1 NONVOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2013-07-04
Information query
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