Invention Grant
US09000522B2 FinFET with dielectric isolation by silicon-on-nothing and method of fabrication
有权
FinFET通过无硅无电极介电隔离和制造方法
- Patent Title: FinFET with dielectric isolation by silicon-on-nothing and method of fabrication
- Patent Title (中): FinFET通过无硅无电极介电隔离和制造方法
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Application No.: US13737002Application Date: 2013-01-09
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Publication No.: US09000522B2Publication Date: 2015-04-07
- Inventor: Kangguo Cheng , Balasubramanian S. Haran , Shom Ponoth , Theodorus Eduardus Standaert , Tenko Yamashita
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agent Joseph P. Abate; Howard M. Cohn
- Main IPC: H01L21/762
- IPC: H01L21/762 ; H01L27/12
Abstract:
An improved finFET and method of fabrication using a silicon-on-nothing process flow is disclosed. Nitride spacers protect the fin sides during formation of cavities underneath the fins for the silicon-on-nothing (SON) process. A flowable oxide fills the cavities to form an insulating dielectric layer under the fins.
Public/Granted literature
- US20140191321A1 FINFET WITH DIELECTRIC ISOLATION BY SILICON-ON-NOTHING AND METHOD OF FABRICATION Public/Granted day:2014-07-10
Information query
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