Invention Grant
- Patent Title: Gate stack with electrical shunt in end portion of gate stack
- Patent Title (中): 栅极堆叠，栅极堆叠的端部具有电分流
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Application No.: US13613531Application Date: 2012-09-13
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Publication No.: US09000527B2Publication Date: 2015-04-07
- Inventor: Date Jan Willem Noorlag
- Applicant: Date Jan Willem Noorlag
- Applicant Address: US CA Cupertino
- Assignee: Apple Inc.
- Current Assignee: Apple Inc.
- Current Assignee Address: US CA Cupertino
- Agency: Meyertons, Hood, Kivlin, Kowert & Goetzel, P.C.
- Agent Gareth M. Sampson
- Main IPC: H01L21/70
- IPC: H01L21/70 ; H01L21/8238 ; H01L27/02
Abstract:
A semiconductor device is formed in which a first-type doped field effect transistor has a first gate stack that has an end portion with a second gate stack formed for a second-type, complementary doped field effect transistor. Lateral electrical contact is made between the first gate stack and the second gate stack. The lateral electrical contact provides an electrical shunt at the end of the first gate stack.
Public/Granted literature
- US20130307081A1 GATE STACK WITH ELECTRICAL SHUNT IN END PORTION OF GATE STACK Public/Granted day:2013-11-21
Information query
IPC分类:
