Invention Grant
- Patent Title: Semiconductor device and fabrication method
- Patent Title (中): 半导体器件及其制造方法
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Application No.: US13717603Application Date: 2012-12-17
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Publication No.: US09000528B2Publication Date: 2015-04-07
- Inventor: Yong Sun Jung
- Applicant: SK hynix Inc.
- Applicant Address: KR Icheon
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Icheon
- Priority: KR10-2012-0091823 20120822
- Main IPC: H01L27/088
- IPC: H01L27/088
Abstract:
A semiconductor device using a small-sized metal contact as a program gate of an antifuse, and a method of fabricating the same are described. The semiconductor device includes a metal contact structure formed on a semiconductor substrate of a peripheral circuit area, and includes a first gate insulating layer to be ruptured. A gate structure is formed on the semiconductor substrate to one side of the metal contact structure.
Public/Granted literature
- US20140054712A1 SEMICONDUCTOR DEVICE AND FABRICATION METHOD Public/Granted day:2014-02-27
Information query
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