Invention Grant
- Patent Title: Strain sensor and method for manufacturing the same
- Patent Title (中): 应变传感器及其制造方法
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Application No.: US14203868Application Date: 2014-03-11
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Publication No.: US09000547B2Publication Date: 2015-04-07
- Inventor: Yusaku Asano , Kazuhito Higuchi , Takeshi Miyagi , Yoshihiro Higashi , Michiko Hara , Hideaki Fukuzawa , Masayuki Kii , Eizo Fujisawa
- Applicant: Kabushiki Kaisha Toshiba
- Applicant Address: JP Minato-ku
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2013-186705 20130909
- Main IPC: H01L29/82
- IPC: H01L29/82 ; H01L21/00 ; G01L1/12 ; H01L29/84 ; H01L43/12 ; H01L43/08
Abstract:
According to one embodiment, a strain sensor includes a substrate, a lid, a frame, and a sensing unit. The substrate has a first surface. The lid is provided on the first surface. The frame is provided between the substrate and the lid. The frame is nonconductive and includes a magnetic body. The sensing unit is provided inside the frame between the substrate and the lid, and includes a magnetoresistance effect element.
Public/Granted literature
- US20150069540A1 STRAIN SENSOR AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2015-03-12
Information query
IPC分类:
