Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US14252649Application Date: 2014-04-14
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Publication No.: US09000554B2Publication Date: 2015-04-07
- Inventor: Kazuhiro Shimizu
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- Priority: JP2013-178144 20130829
- Main IPC: H01L29/00
- IPC: H01L29/00 ; H01L29/06

Abstract:
A first isolation trench insulates and separates a low-voltage region, a high-voltage region, and a connection region of the semiconductor layer from each other. A low-potential signal processing circuit is in the low-voltage region, and operates at a lower potential. A high-potential signal processing circuit is in the high-voltage region, and operates at a higher potential. A capacitor is on the connection region and transmits the second alternating current signal from the low-potential signal processing circuit to the high-potential signal processing circuit. The capacitor includes a low-potential electrode connected to the low-potential signal processing circuit, and a high-potential electrode connected to the high-potential signal processing circuit. First wiring layers of the low-potential electrode and second wiring layers of the high-potential electrode are capacitively coupled. Side wall surfaces of the first wiring layers and those of the second wiring layers are opposed to each other.
Public/Granted literature
- US20150061070A1 SEMICONDUCTOR DEVICE Public/Granted day:2015-03-05
Information query
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