Invention Grant
- Patent Title: Lateral etch stop for NEMS release etch for high density NEMS/CMOS monolithic integration
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Application No.: US13269552Application Date: 2011-10-07
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Publication No.: US09000556B2Publication Date: 2015-04-07
- Inventor: Josephine B. Chang , Leland Chang , Sebastian U. Engelmann , Michael A. Guillorn
- Applicant: Josephine B. Chang , Leland Chang , Sebastian U. Engelmann , Michael A. Guillorn
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agent Ido Tuchman; Vazken Alexanian
- Main IPC: H01L21/70
- IPC: H01L21/70 ; H01L21/84 ; H01L27/12 ; B81C1/00 ; H01L21/56

Abstract:
Structure and method for fabricating a barrier layer that separates an electromechanical device and a CMOS device on a substrate. An example structure includes a protective layer encapsulating the electromechanical device, where the barrier layer may withstand an etch process capable of removing the protective layer, but not the barrier layer. The substrate may be silicon-on-insulator or a multilayer wafer substrate. The electromechanical device may be a microelectromechanical system (MEMS) or a nanoelectromechanical system (NEMS).
Public/Granted literature
- US20130087882A1 LATERAL ETCH STOP FOR NEMS RELEASE ETCH FOR HIGH DENSITY NEMS/CMOS MONOLITHIC INTEGRATION Public/Granted day:2013-04-11
Information query
IPC分类: