Invention Grant
US09000559B2 Semiconductor device, method of cutting electrical fuse, and method of determining electrical fuse state
有权
半导体装置，切断电熔丝的方法以及确定电熔丝状态的方法
- Patent Title: Semiconductor device, method of cutting electrical fuse, and method of determining electrical fuse state
- Patent Title (中): 半导体装置，切断电熔丝的方法以及确定电熔丝状态的方法
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Application No.: US11802469Application Date: 2007-05-23
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Publication No.: US09000559B2Publication Date: 2015-04-07
- Inventor: Takehiro Ueda
- Applicant: Takehiro Ueda
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Young & Thompson
- Priority: JP2006-157592 20060606
- Main IPC: H01L29/00
- IPC: H01L29/00 ; H01L23/525
Abstract:
A semiconductor device includes a semiconductor substrate and an electrical fuse formed on the semiconductor substrate, and including a first conductor and a second conductor electrically separated from the first conductor. In a state of the electrical fuse after a cutting processing, the first conductor is cut and separated into a first part electrically separated from the second conductor and a second part including a flowing region from which a material constituting the first conductor flows outward and which is electrically connected to the second conductor.
Public/Granted literature
- US20070278616A1 Semiconductor device, method of cutting electrical fuse, and method of determining electrical fuse state Public/Granted day:2007-12-06
Information query
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