An anti-fuse array of a semiconductor device and a method for forming the same are disclosed. The anti-fuse array for a semiconductor device includes a first-type semiconductor substrate formed to define an active region by a device isolation region, a second-type impurity implantation region formed in the active region, a first-type channel region isolated from the semiconductor substrate by the second-type impurity implantation region, a gate electrode formed over the channel region, and a first metal contact formed over the second-type impurity implantation region.