Invention Grant
- Patent Title: Patterned ground shield structures and semiconductor devices
- Patent Title (中): 图案化的接地屏蔽结构和半导体器件
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Application No.: US14078946Application Date: 2013-11-13
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Publication No.: US09000561B2Publication Date: 2015-04-07
- Inventor: Xining Wang , Jenhao Cheng , Ling Liu
- Applicant: Semiconductor Manufacturing International (Shanghai) Corporation
- Applicant Address: CN Shanghai
- Assignee: Semiconductor Manufacturing International (Shanghai) Corporation
- Current Assignee: Semiconductor Manufacturing International (Shanghai) Corporation
- Current Assignee Address: CN Shanghai
- Agency: Anova Law Group, PLLC
- Priority: CN201310224040 20130605
- Main IPC: H01L49/02
- IPC: H01L49/02 ; H01L23/522

Abstract:
A patterned ground shield structure is provided. The patterned ground shield structure includes a substrate having a dielectric layer. The patterned ground shield structure also includes a plurality of conductive rings having a plurality of sub conductive rings in the dielectric layer. Further, the patterned ground shield structure includes an interconnection line connecting with all of the sub conductive rings in the dielectric layer. Further, the patterned ground shield structure also includes a ground ring connecting with the interconnection line.
Public/Granted literature
- US20140361401A1 PATTERNED GROUND SHIELD STRUCTURES AND SEMICONDUCTOR DEVICES Public/Granted day:2014-12-11
Information query
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