Invention Grant
- Patent Title: Semiconductor device having stacked substrates with protruding and recessed electrode connection
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Application No.: US13403338Application Date: 2012-02-23
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Publication No.: US09000575B2Publication Date: 2015-04-07
- Inventor: Hideo Imai
- Applicant: Hideo Imai
- Applicant Address: JP
- Assignee: Seiko Epson Corporation
- Current Assignee: Seiko Epson Corporation
- Current Assignee Address: JP
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: JP2011-037969 20110224
- Main IPC: H01L23/02
- IPC: H01L23/02 ; H01L23/48 ; H01L23/52 ; H01L29/40 ; H01L21/768 ; H01L25/065
Abstract:
A first substrate with a penetration electrode formed thereon is stacked on a second substrate with a protruding electrode formed thereon. The penetration electrode has a recessed portion. The substrates are stacked with the protruding electrode entered in the recessed portion. A distal width of the protruding electrode is smaller than an opening width of the recessed portion.
Public/Granted literature
- US20120217650A1 SEMICONDUCTOR DEVICE, SENSOR AND ELECTRONIC DEVICE Public/Granted day:2012-08-30
Information query
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