Invention Grant
- Patent Title: Power semiconductor module and power conversion device
- Patent Title (中): 功率半导体模块和电源转换装置
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Application No.: US13979595Application Date: 2012-02-21
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Publication No.: US09000582B2Publication Date: 2015-04-07
- Inventor: Shinji Hiramitsu , Atsushi Koshizaka , Masato Higuma , Hiroshi Tokuda , Keiji Kawahara
- Applicant: Shinji Hiramitsu , Atsushi Koshizaka , Masato Higuma , Hiroshi Tokuda , Keiji Kawahara
- Applicant Address: JP Hitachinaka-shi
- Assignee: Hitachi Automotive Systems, Ltd.
- Current Assignee: Hitachi Automotive Systems, Ltd.
- Current Assignee Address: JP Hitachinaka-shi
- Agency: Crowell & Moring LLP
- Priority: JP2011-041112 20110228
- International Application: PCT/JP2012/054129 WO 20120221
- International Announcement: WO2012/117894 WO 20120907
- Main IPC: H01L23/24
- IPC: H01L23/24 ; H01L21/52 ; H01L23/34 ; H01L25/07 ; H01L25/18 ; H02M1/00 ; H02M3/155 ; H02M7/48 ; H01L23/367 ; H01L23/00 ; H02M7/00 ; H01L23/498

Abstract:
A power semiconductor module includes: a circuit body having a power semiconductor element and a conductor member connected to the power semiconductor element; a case in which the circuit body is housed; and a connecting member which connects the circuit body and the case. The case includes: a first heat dissipating member and a second heat dissipating member which are disposed in opposed relation to each other while interposing the circuit body in between; a side wall which joins the first heat dissipating member and the second heat dissipating member; and an intermediate member which is formed on the periphery of the first heat dissipating member and connected to the side wall, the intermediate member including a curvature that is projected toward a housing space of the case.
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