Invention Grant
- Patent Title: Conductive film and semiconductor device
- Patent Title (中): 导电膜和半导体器件
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Application No.: US13768567Application Date: 2013-02-15
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Publication No.: US09000591B2Publication Date: 2015-04-07
- Inventor: Yuichi Yamazaki , Makoto Wada , Tatsuro Saito , Tadashi Sakai
- Applicant: Kabushiki Kaisha Toshiba
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2012-070004 20120326
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/498 ; H01L23/532 ; B82Y30/00
Abstract:
A conductive film of an embodiment includes: a fine catalytic metal particle as a junction and a graphene extending in a network form from the junction.
Public/Granted literature
- US20130249093A1 CONDUCTIVE FILM AND SEMICONDUCTOR DEVICE Public/Granted day:2013-09-26
Information query
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