Invention Grant
- Patent Title: Transistors having a gate comprising a titanium nitride layer
- Patent Title (中): 具有包括氮化钛层的栅极的晶体管
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Application No.: US13530621Application Date: 2012-06-22
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Publication No.: US09000596B2Publication Date: 2015-04-07
- Inventor: Pierre Caubet , Sylvain Baudot
- Applicant: Pierre Caubet , Sylvain Baudot
- Applicant Address: FR Crolles
- Assignee: STMicroelectronics (Crolles 2) SAS
- Current Assignee: STMicroelectronics (Crolles 2) SAS
- Current Assignee Address: FR Crolles
- Agency: Allen, Dyer, Doppelt, Milbrath & Gilchrist, P.A.
- Priority: FR1155917 20110630
- Main IPC: H01L23/52
- IPC: H01L23/52 ; H01L23/532 ; H01L21/28 ; H01L29/49
Abstract:
A MOS transistor having a gate insulator including a dielectric of high permittivity and a conductive layer including a TiN layer, wherein the nitrogen composition in the TiN layer is sub-stoichiometric in its lower portion and progressively increases to a stoichiometric composition in its upper portion.
Public/Granted literature
- US20130001708A1 TRANSISTORS HAVING A GATE COMPRISING A TITANIUM NITRIDE LAYER AND METHOD FOR DEPOSITING THIS LAYER Public/Granted day:2013-01-03
Information query
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