Invention Grant
US09000599B2 Multichip integration with through silicon via (TSV) die embedded in package
有权
多芯片集成通过硅通孔(TSV)芯片嵌入封装
- Patent Title: Multichip integration with through silicon via (TSV) die embedded in package
- Patent Title (中): 多芯片集成通过硅通孔(TSV)芯片嵌入封装
-
Application No.: US13893216Application Date: 2013-05-13
-
Publication No.: US09000599B2Publication Date: 2015-04-07
- Inventor: Digvijay A. Raorane , Yonggang Li , Rahul N. Manepalli , Javier Soto Gonzalez
- Applicant: Digvijay A. Raorane , Yonggang Li , Rahul N. Manepalli , Javier Soto Gonzalez
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Schwabe, Williamson & Wyatt, P.C.
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L23/522

Abstract:
Embodiments of the present disclosure are directed to integrated circuit (IC) package assemblies with three-dimensional (3D) integration of multiple dies, as well as corresponding fabrication methods and systems incorporating such 3D IC package assemblies. A bumpless build-up layer (BBUL) package substrate may be formed on a first die, such as a microprocessor die. Laser radiation may be used to form an opening in a die backside film to expose TSV pads on the back side of the first die. A second die, such as a memory die stack, may be coupled to the first die by die interconnects formed between corresponding TSVs of the first and second dies. Underfill material may be applied to fill some or all of any remaining gap between the first and second dies, and/or an encapsulant may be applied over the second die and/or package substrate. Other embodiments may be described and/or claimed.
Public/Granted literature
- US20140332975A1 MULTICHIP INTEGRATION WITH THROUGH SILICON VIA (TSV) DIE EMBEDDED IN PACKAGE Public/Granted day:2014-11-13
Information query
IPC分类: