Invention Grant
- Patent Title: Voltage detecting circuit
- Patent Title (中): 电压检测电路
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Application No.: US13396235Application Date: 2012-02-14
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Publication No.: US09000751B2Publication Date: 2015-04-07
- Inventor: Po-Hung Chen , Makoto Takamiya , Takayasu Sakurai
- Applicant: Po-Hung Chen , Makoto Takamiya , Takayasu Sakurai
- Applicant Address: JP Kawasaki
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki
- Agency: Oliff PLC
- Priority: JP2011-33619 20110218
- Main IPC: G01R1/30
- IPC: G01R1/30 ; G01R19/165 ; G01F3/20

Abstract:
In a voltage detecting circuit, a transistor is configured as a P-type MOSFET, and includes a source connected with an input terminal, a gate connected with a ground voltage terminal and a drain connected with an output terminal. A transistor is configured as a P-type MOSFET, and includes a gate and a source connected with the output terminal and a drain connected with the ground terminal. Gate width and gate length of the transistor and gate width and gate length of the transistor are adjusted so that source-drain current flowing between the source and the drain of the transistor becomes equal to source-drain current flowing between the source and the drain of the transistor when the voltage applied to the input terminal is set to be preset trigger voltage. This configuration accomplishes detecting that the input voltage exceeds the trigger voltage with simple configuration.
Public/Granted literature
- US20120212212A1 VOLTAGE DETECTING CIRCUIT Public/Granted day:2012-08-23
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