Invention Grant
- Patent Title: Transistor test structure
- Patent Title (中): 晶体管测试结构
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Application No.: US13557577Application Date: 2012-07-25
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Publication No.: US09000785B2Publication Date: 2015-04-07
- Inventor: Clement Charbuillet , Patrick Scheer
- Applicant: Clement Charbuillet , Patrick Scheer
- Applicant Address: FR Montrouge
- Assignee: STMicroelectronics SA
- Current Assignee: STMicroelectronics SA
- Current Assignee Address: FR Montrouge
- Agency: Allen, Dyer, Doppelt, Milbrath & Gilchrist, P.A.
- Priority: FR1156802 20110726
- Main IPC: G01R31/317
- IPC: G01R31/317 ; G01R31/40 ; G01R31/02 ; G01R31/26 ; H01L21/66
Abstract:
A test structure may characterize the properties of a transistor including a DC test structure for testing DC properties of the transistor, and an AC test structure for testing AC properties of the transistor. The DC and AC test structures may have common test pads.
Public/Granted literature
- US20130027066A1 TRANSISTOR TEST STRUCTURE Public/Granted day:2013-01-31
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