Invention Grant
- Patent Title: Programming a RRAM method and apparatus
- Patent Title (中): 编程RRAM方法和设备
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Application No.: US13531449Application Date: 2012-06-22
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Publication No.: US09001552B1Publication Date: 2015-04-07
- Inventor: Sang Thanh Nguyen , Hagop Nazarian , Layne Armijo
- Applicant: Sang Thanh Nguyen , Hagop Nazarian , Layne Armijo
- Applicant Address: US CA Santa Clara
- Assignee: Crossbar, Inc.
- Current Assignee: Crossbar, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Ogawa P.C.
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C11/404

Abstract:
A circuit for programming a resistive switching device includes a resistive switching device characterized by a programmable resistance, the resistive switching device comprising a first terminal, a second terminal, and a resistive switching element, a first circuit configured to supply a programming voltage to the resistive switching device and to supply a predetermined current to flow in the resistive switching device, and a second circuit coupled to the first circuit and to the resistive switching device, wherein the second circuit is configured to terminate the supply of the programming voltage to the resistive switching device when the predetermined current flows in the resistive switching device.
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