Invention Grant
US09001567B2 Replacement of a faulty memory cell with a spare cell for a memory circuit
有权
用存储器电路的备用单元替换故障存储单元
- Patent Title: Replacement of a faulty memory cell with a spare cell for a memory circuit
- Patent Title (中): 用存储器电路的备用单元替换故障存储单元
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Application No.: US14527644Application Date: 2014-10-29
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Publication No.: US09001567B2Publication Date: 2015-04-07
- Inventor: David T. Wang
- Applicant: INPHI Corporation
- Applicant Address: US CA Santa Clara
- Assignee: INPHI Corporation
- Current Assignee: INPHI Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Ogawa P.C.
- Agent Richard T. Ogawa
- Main IPC: G11C29/04
- IPC: G11C29/04 ; G11C11/24 ; G11C29/00 ; G11C11/40

Abstract:
A memory integrated circuit device is provided. The device includes a plurality of regular address inputs and at least one spare address input configured for a selected mode or an unselected mode. The device includes a plurality of control inputs, a plurality of data inputs, and a plurality of data outputs. The device has a plurality of memory arrays. Each of the memory arrays comprises a plurality of memory cells. Each of the plurality of memory cells is coupled to a data input/output. The device has a spare group of memory cells comprising a plurality of spare memory cells. Each of the plurality of spare memory cells is externally (or internally) addressable using the address match table and configured with the spare address input; whereupon the spare address input is coupled to the address match table to access the spare memory cells.
Public/Granted literature
- US20150049539A1 REPLACEMENT OF A FAULTY MEMORY CELL WITH A SPARE CELL FOR A MEMORY CIRCUIT Public/Granted day:2015-02-19
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