Invention Grant
- Patent Title: Pseudo retention till access mode enabled memory
- Patent Title (中): 伪保留直到访问模式启用存储器
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Application No.: US14040297Application Date: 2013-09-27
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Publication No.: US09001570B1Publication Date: 2015-04-07
- Inventor: Rashmi Sachan , Parvinder Rana , Abhishek Kesarwani , Robert Pitts
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent John R. Pessetto; Frank D. Cimino
- Main IPC: G11C8/00
- IPC: G11C8/00 ; G11C11/418 ; G11C11/417 ; G11C11/24

Abstract:
A memory configurable to be used in an RTA mode includes an input latch configured to receive an input address bus and to generate a latched address bus that corresponds to a memory location. An address flop is configured to save the latched address and to generate a flopped address. A first block address pre-decoder stage is configured to generate a pre-decoded latched address to an RTA generation logic in response to the latched address bus; and a second block address pre-decoder configured to generate a pre-decoded flopped address to the RTA generation logic in response to the flopped address. The RTA generation logic generates an RTA enable signal one clock cycle before a memory block access, to activate a memory block corresponding to the memory location, such that an array supply voltage of the memory block starts charging one clock cycle before a memory block access.
Public/Granted literature
- US20150092475A1 PSEUDO RETENTION TILL ACCESS MODE ENABLED MEMORY Public/Granted day:2015-04-02
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