Invention Grant
US09001570B1 Pseudo retention till access mode enabled memory 有权
伪保留直到访问模式启用存储器

Pseudo retention till access mode enabled memory
Abstract:
A memory configurable to be used in an RTA mode includes an input latch configured to receive an input address bus and to generate a latched address bus that corresponds to a memory location. An address flop is configured to save the latched address and to generate a flopped address. A first block address pre-decoder stage is configured to generate a pre-decoded latched address to an RTA generation logic in response to the latched address bus; and a second block address pre-decoder configured to generate a pre-decoded flopped address to the RTA generation logic in response to the flopped address. The RTA generation logic generates an RTA enable signal one clock cycle before a memory block access, to activate a memory block corresponding to the memory location, such that an array supply voltage of the memory block starts charging one clock cycle before a memory block access.
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