Invention Grant
US09001597B2 Memory system, semiconductor memory device, and wiring substrate, the semiconductor memory device including termination resistance circuit or control circuit
有权
存储系统，半导体存储器件和布线基板，该半导体存储器件包括终端电阻电路或控制电路
- Patent Title: Memory system, semiconductor memory device, and wiring substrate, the semiconductor memory device including termination resistance circuit or control circuit
- Patent Title (中): 存储系统，半导体存储器件和布线基板，该半导体存储器件包括终端电阻电路或控制电路
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Application No.: US13589838Application Date: 2012-08-20
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Publication No.: US09001597B2Publication Date: 2015-04-07
- Inventor: Atsuo Koshizuka
- Applicant: Atsuo Koshizuka
- Applicant Address: LU Luxembourg
- Assignee: PS4 Luxco S.A.R.L.
- Current Assignee: PS4 Luxco S.A.R.L.
- Current Assignee Address: LU Luxembourg
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2009-011641 20090122
- Main IPC: G11C7/00
- IPC: G11C7/00 ; G11C5/06 ; G11C5/04 ; G11C5/14 ; G11C7/10 ; G11C8/04 ; G11C8/18
Abstract:
A semiconductor device includes a first input terminal receiving a termination resistance control signal, and a termination resistance circuit that is able to be controlled to be turned on or off by the termination resistance control signal. The termination resistance circuit is turned off, irrespective of a level of said termination resistance control signal when the semiconductor device outputs data in response to a read command.
Public/Granted literature
- US20120306531A1 MEMORY SYSTEM, SEMICONDUCTOR MEMORY DEVICE, AND WIRING SUBSTRATE Public/Granted day:2012-12-06
Information query
