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US09001606B2 Memory methods and systems with adiabatic switching 有权
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Memory methods and systems with adiabatic switching
Abstract:
A memory system includes wordlines and pairs of complementary bitlines that provide access to memory storage elements. Capacitive and resistive loads associated with wordlines and bitlines are driven relatively slowly between voltage levels to reduce peak current, and thus power dissipation. Power dissipation is further reduced by charging complementary bitlines at substantially different rates.
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