Invention Grant
- Patent Title: Memory system
- Patent Title (中): 内存系统
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Application No.: US14017246Application Date: 2013-09-03
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Publication No.: US09003261B2Publication Date: 2015-04-07
- Inventor: Ikuo Magaki , Naoto Oshiyama , Kenichiro Yoshii , Kosuke Hatsuda , Shirou Fujita , Tokumasa Hara , Kohei Oikawa , Kenta Yasufuku
- Applicant: Kabushiki Kaisha Toshiba
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Patterson & Sheridan, LLP
- Priority: JP2012-243630 20121105
- Main IPC: G11C29/00
- IPC: G11C29/00 ; G06F11/10

Abstract:
A memory system includes a first nonvolatile memory, a second nonvolatile memory with a longer access latency than the first nonvolatile memory, a first error correction unit, a second error correction unit, and an interface. The first nonvolatile memory stores first data and a first error correction code generated for the first data. The second nonvolatile memory stores a second error correction code which is generated for the first data with a higher correction ability than that of the first error correction code. The first error correction unit performs error correction on the first data by using the first error correction code. The second error correction unit performs error correction on the first data by using the second error correction code. The interface transmits the first data after the error correction to a host.
Public/Granted literature
- US20140129901A1 MEMORY SYSTEM Public/Granted day:2014-05-08
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