Invention Grant
- Patent Title: Stress isolated MEMS structures and methods of manufacture
- Patent Title (中): 应力隔离的MEMS结构和制造方法
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Application No.: US13451790Application Date: 2012-04-20
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Publication No.: US09010190B2Publication Date: 2015-04-21
- Inventor: David P. Potasek , John C. Christenson , Bruce H. Satterlund , Randy Phillips , Dave Holmquist
- Applicant: David P. Potasek , John C. Christenson , Bruce H. Satterlund , Randy Phillips , Dave Holmquist
- Applicant Address: US MN Burnsville
- Assignee: Rosemount Aerospace Inc.
- Current Assignee: Rosemount Aerospace Inc.
- Current Assignee Address: US MN Burnsville
- Agency: Locke Lord LLP
- Agent Scott D. Wofsy; Joshua L. Jones
- Main IPC: G01L7/08
- IPC: G01L7/08 ; B81B7/00
Abstract:
A MEMS pressure sensor may be manufactured to include a backing substrate having a diaphragm backing portion and a pedestal portion. A diaphragm substrate may be manufactured to include a pedestal portion and a diaphragm that is mounted to the diaphragm backing portion of the backing substrate to form a stress isolated MEMS die. The pedestal portions of the backing and diaphragm substrates form a pedestal of the stress isolated MEMS die. The pedestal is configured for isolating the diaphragm from stresses including packaging and mounting stress imparted on the stress isolated MEMS die.
Public/Granted literature
- US20130276544A1 STRESS ISOLATED MEMS STRUCTURES AND METHODS OF MANUFACTURE Public/Granted day:2013-10-24
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