A method for determining the temperature of a power semiconductor, wherein a first control contact is connected to a first pole of a series resistor integrated in the power semiconductor. A second pole—which continues to the power semiconductor—of the series resistor is connected to a second control contact. A first control contact and a second control contact are connected to a first connection terminal and second connection terminal via respective bonding wires. The resistance value of the series resistor is determined by an electrical measurement between the two connection terminals. On the basis of the resistance value and a temperature-resistance characteristic curve of the series resistor, the temperature of the power semiconductor is determined based on the temperature of the series resistor.