Invention Grant
- Patent Title: Plasma processing apparatus
- Patent Title (中): 等离子体处理装置
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Application No.: US13409847Application Date: 2012-03-01
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Publication No.: US09011635B2Publication Date: 2015-04-21
- Inventor: Yuki Hosaka , Naokazu Furuya , Mitsunori Ohata
- Applicant: Yuki Hosaka , Naokazu Furuya , Mitsunori Ohata
- Applicant Address: JP
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP
- Agency: Cantor Colburn LLP
- Priority: JP2011-046770 20110303
- Main IPC: H01L21/304
- IPC: H01L21/304 ; C23F1/00 ; H01J37/32
Abstract:
A plasma processing apparatus includes: a first ground member provided in processing chamber in such a way that at least a portion of the first ground member is exposed to a processing space, wherein the first ground member forms a ground potential; a second ground member provided in an exhaust space of the processing chamber to face the first ground member in such a way that at least a portion of the second ground member is exposed to the exhaust space, wherein the second ground member forms a ground potential; and a ground rod that moves up and down between the first and second ground members and contacts any one of the first or second ground member to adjust a ground state of the first or second ground member.
Public/Granted literature
- US20120222817A1 PLASMA PROCESSING APPARATUS Public/Granted day:2012-09-06
Information query
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