Invention Grant
US09011969B2 Low-E panel with improved dielectric layer and method for forming the same
有权
具有改善介电层的Low-E面板及其形成方法
- Patent Title: Low-E panel with improved dielectric layer and method for forming the same
- Patent Title (中): 具有改善介电层的Low-E面板及其形成方法
-
Application No.: US13337962Application Date: 2011-12-27
-
Publication No.: US09011969B2Publication Date: 2015-04-21
- Inventor: Mohd Fadzli Anwar Hassan , Richard Blacker , Yiwei Lu , Minh Anh Nguyen , Zhi-Wen Sun , Guowen Ding , Jingyu Lao , Hien Minh Huu Le
- Applicant: Mohd Fadzli Anwar Hassan , Richard Blacker , Yiwei Lu , Minh Anh Nguyen , Zhi-Wen Sun , Guowen Ding , Jingyu Lao , Hien Minh Huu Le
- Applicant Address: US CA San Jose US MI Auburn Hills
- Assignee: Intermolecular, Inc.,Guardian Industries Corp.
- Current Assignee: Intermolecular, Inc.,Guardian Industries Corp.
- Current Assignee Address: US CA San Jose US MI Auburn Hills
- Main IPC: B05D5/06
- IPC: B05D5/06 ; C03C17/34 ; C03C17/36
Abstract:
Embodiments provided herein describe a low-e panel and a method for forming a low-e panel. A transparent substrate is provided. A metal oxynitride layer is formed over the transparent substrate. The metal oxynitride layer includes a first metal and a second metal. A reflective layer is formed over the transparent substrate.
Public/Granted literature
- US20130164560A1 Low-E Panel With Improved Dielectric Layer And Method For Forming The Same Public/Granted day:2013-06-27
Information query
