Invention Grant
- Patent Title: Methods for depositing oxygen deficient metal films
- Patent Title (中): 沉积缺氧金属膜的方法
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Application No.: US13934486Application Date: 2013-07-03
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Publication No.: US09011973B2Publication Date: 2015-04-21
- Inventor: Schubert Chu , Er-Xuan Ping , Yoshihide Senzaki
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Servilla Whitney LLC
- Main IPC: C23C16/40
- IPC: C23C16/40 ; C23C16/06 ; C23C16/455 ; C23C28/00

Abstract:
Methods of depositing an oxygen deficient metal film by chemical reaction of at least one precursor having a predetermined oxygen deficiency on a substrate. An exemplary method includes, during a metal oxide deposition cycle, exposing the substrate to a metal reactant gas comprising a metal and an oxygen reactant gas comprising oxygen to form a layer containing a metal oxide on the substrate. During an oxygen deficient deposition cycle, exposing the substrate to a metal reactant gas comprising a metal and an additional reactant gas excluding oxygen to form a second layer at least one of a metal nitride and a mixed metal on the substrate during a second cycle, the second layer being oxygen deficient relative to the layer containing the metal oxide; and repeating the metal oxide deposition cycle and the oxygen deficient deposition cycle to form the oxygen deficient film having the predetermined oxygen deficiency.
Public/Granted literature
- US20140017403A1 Methods For Depositing Oxygen Deficient Metal Films Public/Granted day:2014-01-16
Information query
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