Invention Grant
- Patent Title: Manufacturing method of non-volatile memory device
- Patent Title (中): 非易失性存储器件的制造方法
-
Application No.: US13812227Application Date: 2011-07-26
-
Publication No.: US09012294B2Publication Date: 2015-04-21
- Inventor: Satoru Fujii , Takumi Mikawa , Haruyuki Sorada
- Applicant: Satoru Fujii , Takumi Mikawa , Haruyuki Sorada
- Applicant Address: JP Osaka
- Assignee: Panasonic Intellectual Property Management Co., Ltd.
- Current Assignee: Panasonic Intellectual Property Management Co., Ltd.
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2010-168413 20100727
- International Application: PCT/JP2011/004207 WO 20110726
- International Announcement: WO2012/014447 WO 20120202
- Main IPC: H01L45/00
- IPC: H01L45/00 ; H01L21/20 ; H01L27/10 ; H01L27/24

Abstract:
Each of the step of forming a first variable resistance layer (18a) and the step of forming a second variable resistance layer (18b) includes performing a cycle once or plural times, the cycle consisting of a first step of introducing a source gas composed of molecules containing atoms of a transition metal; a second step of removing the source gas after the first step; a third step of introducing a reactive gas to form a transition metal oxide after the second step; and a fourth step of removing the reactive gas after the third step. The step of forming the first variable resistance layer (18a) is performed in a state in which the substrate is kept at a temperature at which a self-decomposition reaction of the source gas does not occur. One or plural of conditions used for forming the second variable resistance layer (18b) is/are made different from the one or plural conditions used for forming the first variable resistance layer (18a), the conditions being the temperature of the substrate, an amount of the introduced source gas and an amount of the introduced reactive gas.
Public/Granted literature
- US20130122651A1 MANUFACTURING METHOD OF NON-VOLATILE MEMORY DEVICE Public/Granted day:2013-05-16
Information query
IPC分类: