Invention Grant
- Patent Title: Etching polysilicon
- Patent Title (中): 蚀刻多晶硅
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Application No.: US13624272Application Date: 2012-09-21
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Publication No.: US09012318B2Publication Date: 2015-04-21
- Inventor: Jerome A. Imonigie , Prashant Raghu
- Applicant: Jerome A. Imonigie , Prashant Raghu
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dicke, Billig & Czaja, PLLC
- Main IPC: H01L21/336
- IPC: H01L21/336 ; C09K13/08 ; H01L21/28 ; H01L21/3213 ; H01L27/115
Abstract:
Methods and compositions for etching polysilicon including aqueous compositions containing nitric acid and ammonium fluoride, and apparatus formed thereby.
Public/Granted literature
- US20140087551A1 ETCHING POLYSILICON Public/Granted day:2014-03-27
Information query
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