Invention Grant
- Patent Title: Etching method and non-transitory storage medium
- Patent Title (中): 蚀刻方法和非暂时性储存介质
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Application No.: US14290036Application Date: 2014-05-29
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Publication No.: US09012331B2Publication Date: 2015-04-21
- Inventor: Shuji Moriya , Atsushi Ando , Jun Sonobe , Christopher Turpin
- Applicant: Tokyo Electron Limited , L'Air Liquide, Societe Anonyme pour l'Etude et l'Exploitation des Procedes Georges Claude
- Applicant Address: FR Paris Cedex JP Tokyo
- Assignee: L'Air Liquide Societe Anonyme pour l'Etude et l'Exploitation des Procedes Georges Claude,Tokyo Electron Limited
- Current Assignee: L'Air Liquide Societe Anonyme pour l'Etude et l'Exploitation des Procedes Georges Claude,Tokyo Electron Limited
- Current Assignee Address: FR Paris Cedex JP Tokyo
- Agency: Nath, Goldberg & Meyer
- Agent Jerald L. Meyer
- Priority: JP2013-115577 20130531
- Main IPC: H01L21/302
- IPC: H01L21/302 ; H01L21/461 ; H01L21/306 ; H01L21/67
Abstract:
Provided is a method of selectively etching a portion of silicon existing on a surface of a substrate to be processed, which includes: loading the substrate to be processed into a chamber; and supplying an FNO gas and an F2 gas that are diluted with an inert gas into the chamber such that the FNO gas and the F2 gas are reacted with the portion of silicon existing on the surface of the substrate to be processed.
Public/Granted literature
- US20140357085A1 ETCHING METHOD AND NON-TRANSITORY STORAGE MEDIUM Public/Granted day:2014-12-04
Information query
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