Invention Grant
- Patent Title: Silicon carbide semiconductor device and method for manufacturing the same
- Patent Title (中): 碳化硅半导体器件及其制造方法
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Application No.: US13520702Application Date: 2011-03-04
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Publication No.: US09012335B2Publication Date: 2015-04-21
- Inventor: Toru Hiyoshi , Takeyoshi Masuda , Keiji Wada
- Applicant: Toru Hiyoshi , Takeyoshi Masuda , Keiji Wada
- Applicant Address: JP Osaka-shi
- Assignee: Sumitomo Electric Industries, Ltd.
- Current Assignee: Sumitomo Electric Industries, Ltd.
- Current Assignee Address: JP Osaka-shi
- Agency: Venable LLP
- Agent Steven J. Schwarz; F. Brock Riggs
- Priority: JP2010-055910 20100312
- International Application: PCT/JP2011/055093 WO 20110304
- International Announcement: WO2011/111627 WO 20110915
- Main IPC: H01L21/31
- IPC: H01L21/31 ; H01L21/82 ; H01L21/04 ; H01L29/51 ; H01L29/66 ; H01L29/78 ; H01L29/94 ; H01L29/04 ; H01L29/16
Abstract:
A silicon carbide semiconductor device having excellent electrical characteristics including channel mobility and a method for manufacturing the same are provided. The method for manufacturing a silicon carbide semiconductor device includes: an epitaxial layer forming step of preparing a semiconductor film of silicon carbide; a gate insulating film forming step of forming an oxide film on a surface of the semiconductor film; a nitrogen annealing step of performing heat treatment on the semiconductor film on which the oxide film is formed, in a nitrogen-containing atmosphere; and a post heat treatment step of performing, after the nitrogen annealing step, post heat treatment on the semiconductor film on which the oxide film is formed, in an atmosphere containing an inert gas. The heat treatment temperature in the post heat treatment step is higher than that in the nitrogen annealing step and lower than a melting point of the oxide film.
Public/Granted literature
- US20120286291A1 SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2012-11-15
Information query
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