Invention Grant
US09012336B2 Method for conformal treatment of dielectric films using inductively coupled plasma
有权
使用电感耦合等离子体对电介质膜进行保形处理的方法
- Patent Title: Method for conformal treatment of dielectric films using inductively coupled plasma
- Patent Title (中): 使用电感耦合等离子体对电介质膜进行保形处理的方法
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Application No.: US13858922Application Date: 2013-04-08
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Publication No.: US09012336B2Publication Date: 2015-04-21
- Inventor: Heng Pan , Matthew Scott Rogers , Johanes F. Swenberg , Christopher S. Olsen , Wei Liu , David Chu , Malcom J. Bevan
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Servilla Whitney LLC
- Main IPC: H01L21/469
- IPC: H01L21/469 ; H01L21/31 ; H01L21/02
Abstract:
Disclosed are apparatus and methods for processing a substrate. The substrate having a feature with a layer thereon is exposed to an inductively coupled plasma which forms a substantially conformal layer.
Public/Granted literature
- US20140302686A1 Apparatus and Method for Conformal Treatment of Dielectric Films Using Inductively Coupled Plasma Public/Granted day:2014-10-09
Information query
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