Invention Grant
- Patent Title: Polyimide and photoresist resin composition comprising thereof
- Patent Title (中): 包含它们的聚酰亚胺和光致抗蚀剂树脂组合物
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Application No.: US12940403Application Date: 2010-11-05
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Publication No.: US09012595B2Publication Date: 2015-04-21
- Inventor: Sang Woo Kim , Chanhyo Park , Kyungjun Kim , Hyeran Seong , Sejin Shin , Hye Won Jeong , Jung Ho Jo
- Applicant: Sang Woo Kim , Chanhyo Park , Kyungjun Kim , Hyeran Seong , Sejin Shin , Hye Won Jeong , Jung Ho Jo
- Applicant Address: KR Seoul
- Assignee: LG Chem, Ltd.
- Current Assignee: LG Chem, Ltd.
- Current Assignee Address: KR Seoul
- Agency: Rothwell, Figg, Ernst & Manbeck, P.C.
- Priority: KR10-2009-0064932 20090716
- Main IPC: C08G69/26
- IPC: C08G69/26 ; G03F7/023 ; C08G73/10 ; C08L79/08 ; G03F7/004 ; C08L61/04

Abstract:
The present invention provides polyimide applied to the buffer coating of semiconductors and a photosensitive resin composition including the same. The polyimide is a polyimide polymer represented by Chemical Formula 1 below. Further, the present invention provides a photosensitive resin composition, including 1) BDA-series soluble polyimide having an i-ray permeability of 70% or more; 2) a polyamic acid having elongation of 40% or more; 3) a novolak resin, and 4) diazonaphthoquinone-series photosensitive substance and having a high resolution, high sensitivity, an excellent film characteristic, and mechanical physical properties which are the requirements of semiconductor buffer coating.
Public/Granted literature
- US20110111341A1 POLYIMIDE AND PHOTORESIST RESIN COMPOSITION COMPRISING THEREOF Public/Granted day:2011-05-12
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